Lam Cryo 3.0 cryogenic etch
Cryo 3.0 is Lam's cryogenic etch for future 3D NAND devices with 400 layers and beyond.
What it is
A cryogenic dielectric etch technology that runs at low temperature to cut the deep, high-aspect-ratio holes used in 3D NAND. Lam says Cryo 3.0 is optimized for future 3D NAND devices with 400 layers and beyond and works with its Flex and Vantex systems, so customers can add it to the installed base.↗ source
Why it matters to the stock. Each new NAND layer count needs deeper holes, which makes high-aspect-ratio etch a key step for memory makers adding layers to meet AI storage demand.
News
No stories tagged to this project yet.